Specifications

The Decomposition Effusion Cell is designed to generate ultra-pure arsenic (As₂) by decomposition of gallium arsenide (GaAs | purity > 6 N). The use is similar to a standard effusion cell, where the source material is loaded into the crucible and evaporated by heating the crucible via radiation heating stage.

Because of the incongruent evaporation of GaAs, the As₂ is generated by a lower temperature compared to Ga. Therefore, the Ga remains stable inside the crucible, while the As₂ comes out of the effusion cell at the orifice. To avoid the Ga atoms to flow out of the cell with the As₂ beam out, there is a Ga trapping cap at the orifice. This ensures that no Ga atoms can leave the effusion cell.

The ratio As₂: Ga in the As₂ molecular beam is approx. 1:10^-5, by using the Ga trapping cap.

An extra valve above the Ga trapping cap is available to lower the beam intensity. This valve allows shutting ON and OFF the As₂ beam in a very short time in a ratio approx. 1:10. This version of As₂ source is an affordable and easily operated alternative to valved arsenide sources.

Available versions:

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